Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
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چکیده
منابع مشابه
Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and s...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1996
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-449-251